STM915-16 rf power module gsm mobile applications n linear power amplifier n 890-915 mhz n 12.5 volts n input/output 50 ohms n pout = 16 w min. n gain = 42 db min. description the STM915-16 is a linear power module designed for 12.5 v applications in gsm cellular radio systems. the STM915-16 uses gold metallized transistors with diffused emitter ballast resistors for high linearity class ab operation. pin connection june 1999 absolute maximum ratings (t case = 25 o c) symbol parameter value unit v s2, v s4 dc supply voltage (rf applied/no rf applied) 15.6/30.0 vdc v s1, v s3 dc supply voltage 8.5 vdc v control dc control voltage 4.5 vdc p in rf input power (p out 17 w) 3.0 mw p out 1 rf output power (v s2 ,v s4 = 12.5 v) 20 w t stg storage temperature - 30 to + 100 o c t c operating case temperature - 30 to + 100 o c note1: pulse width = 577 m sec. repetition rate = 4.6 msec. case h100 ? order code branding STM915-16 STM915-16 1 rf input 4 8.0 vdc 2 8.0 vdc 5 12.5 vdc 3 12.5 vdc 6 rf output 1/7
electrical specifications ( t case = 25 c, v s1 , v s3 = 8.0 vdc; v s2 , v s4 = 12.5 vdc) symbol parameter test conditions value unit min. typ. max. bw frequency range 890 915 mhz p out output power 1,2 v cont = 4.0 vdc p in = 1 mw 16 w h efficiency 1, 2 p out = 16 w 35 41 % i q1 leakage current, v s1 , v s2 v cont = 0 vdc p in = 1 mw 0.5 2.0 ma i q2 bias current, v s3 v cont = 0 vdc p in = 1 mw 140 150 ma i q3 quiescent current, v s4 v cont = 0 vdc p in = 1 mw 200 250 ma control dynamic range 3 v cont = 0 to 4.0v 56 db isolation v cont = 0 vdc v s2, s4 = 0 to 15.6v - 14 dbm h harmonics 1, 2 p out = 42 dbm reference - 45 dbc vswr in input vswr 1,2 p out = +13 dbm to +42 dbm 2.0:1 v cont control voltage 0 4.0 vdc i cont control current 1.0 2.0 ma t r rise time 1, 2, 4 p out = +13 to +42 dbm 1.0 m sec noise power 30 khz bandwidth, 20 mhz above f 0 p out = +13 dbm to +42 dbm cw - 70 - 65 dbm stability 1, 2 p out = - 14 to +42 dbm v s2 , v s4 = 10.8 to 15.6 v load vswr = 6:1 source vswr = 3:1 all phase angles t c = - 20 to +60c all spurious outputs more than 60db below carrier load mismatch 1,2 vswr = 10:1 all phase angles v = 15.6vdc p out = 16 w no degradation in output power notes: 1) p in = 1.0mw adjust v control for specified p out . 3) p out (reference) = 42 dbm 2) pulse width = 577 m sec. 4)t r measured at 1% to 81% of p out in watts repetition rate = 4.6 msec. gsm specific tests symbol parameter test conditions value unit min. typ. max. am/am conversion gain p in = f o (0 dbm)+[f o + 200 khz ( - 40 dbm)] v control adjusted for p out = 13, 30, 42 dbm p out (f o + 200 khz) p out (f o - 200 khz) - 40 - 45 dbc dbc am/pm conversion p out = +13 to + 42 dbm p in varied +/ - .5 db 4 /db ref. 1014655e STM915-16 2/7
module dc and test fixture configuration ref. 1015959e STM915-16 3/7
output power vs frequency control voltage vs case temperature output power vs control voltage control voltage, efficiency & input vswr vs frequency output power vs case temperature typical performance STM915-16 4/7
applications recommendations operation limits the STM915-16 power module should never be operated under any condition which exceeds the absolute maximum ratings presented on this data sheet. nor should the module be operated continuously at any of the specified maximum ratings. if the module is to be operated under any condition such that it may be subjected to one or more of the maximum rating conditions, care must be taken to monitor other parameters which may be affected. for example, a combination of high v s3 and input overdrive could result in exceeding the maximum output power rating; in this condition, the output power must be maintained below the maximum rating by use of the gain control pin. gain control the module output power should be limited to 20 watts (43 dbm). the module is designed to be operated with v s1 and v s3 set to 8.0 vdc, v s2 and v s4 set to 12.5 vdc and input power set to 1.0 mw (0 dbm). module gain is adjusted by varying v control . decoupling the bypassing internal to the module is sufficient for the fr equency range 90-1300 mhz. care should be taken to insure proper decoupling for each application as the m odule is capable of a wide range of operating characteristics including "linear" operation, in which an important design criteria is the use of appropriate bypassing. for bypassing low frequencies while maintaining the electrical specifications contained in this data sheet, use of the decoupling network shown in the "module dc and test fixture configuration" diagram herein is recommended. module mounting to insure adequate thermal transfer from the module to the heatsink, it is recommended that a satisfactory thermal compound such as dow corning 340, wakefield 120-2 or equivalent be applied between the module flange and the heatsink. the heatsink mounting surface under the module should be flat to within 0.05 mm ( 0.002 inch). the module should be mounted to the heatsink using 3 mm (or 4-40) or equivalent screws torqued to 5-6 kg-cm (4-6 in-lb). the module leads are attached to the equipment pc board using 180c solder applied to the leads with it properly grounded soldering iron trip, not to exceed 195 c, applied a minimum of 2 mm (0.080 inch) from the body of the module for a duration not to exceed 15 seconds per lead. it is imperative that no other portion of the module, other than the leads, be subjected to temperatures in excess of 100 c (maximum storage temperature), for any period of time, as the plastic moulded cover, internal components and sealing adhesives may be adversely affected by such conditions. due to the construction techniques and the materials used within the module, reflow soldering of the flange heatsink or leads, is not recommended. thermal considerations it will be necessary to provide a suitable heatsink in order to maintain the module flange temperature at or below the maximum case operating temperature. in a case where the module output power will be limited to +42 dbm (16 w) and designing for the worst case efficiency of 35%, the power dissipated by the module will be 29.7 watts. the heatsink must be designed such that the thermal rise will be less than the difference between the maximum ambient temperature at which the module will operate and the maximum operating case temperature of the module while dissipating 29.7 watts. STM915-16 5/7
dim. mm inch min. typ. max. min. typ. max. a 60.45 60.83 2.380 2.395 b 50.04 50.54 1.970 1.990 c 11.31 11.81 0.445 0.465 d 6.35 6.73 0.250 0.265 e 2.16 2.54 0.085 0.100 f 3.35 0.132 g 0.13 0.38 0.005 0.015 h 57.40 2.260 j 51.87 2.042 k 39.17 1.542 l 34.09 1.342 m 29.01 1.142 n 16.31 0.642 p 8.69 0.342 q 0.38 0.64 0.015 0.025 r 3.05 3.30 0.120 0.130 s 13.59 14.09 0.535 0.555 v 4.49 5.51 0.177 0.217 w 6.78 7.06 0.267 0.278 1013762f h100 mechanical data STM915-16 6/7
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 1999 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - mexico - morocco - the neth erlands - singapore - spain - sweden - switzerland - t aiwan - thailand - united kingdom - u.s.a. http://www.st.com . STM915-16 7/7
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